? 2010 ixys all rights reserved 1 - 4 20100303c ixkc 23n60c5 ixys reserves the right to change limits, test conditions and dimensions. symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. r dson v gs = 10 v; i d = 18 a 90 100 mw v gs(th) v ds = v gs ; i d = 1.2 ma 2.5 3 3.5 v i dss v ds = 600 v; v gs = 0 v t vj = 25c t vj = 125c 50 5 a a i gss v gs = 20 v; v ds = 0 v 100 na c iss c oss v gs = 0 v; v ds = 100 v f = 1 mhz 2800 130 pf pf q g q gs q gd v gs = 0 to 10 v; v ds = 400 v; i d = 18 a 60 14 20 80 nc nc nc t d(on) t r t d(off) t f v gs = 10 v; v ds = 400 v i d = 18 a; r g = 3.3 ? 10 5 60 5 ns ns ns ns r thjc 0.85 k/w i d25 = 23 a v dss = 600 v r ds(on) max = 0.1 coolmos ? 1) power mosfet mosfet symbol conditions maximum ratings v dss t vj = 25c 600 v v gs 20 v i d25 i d90 t c = 25c t c = 90c 23 16 a a e as e ar single pulse repetitive 800 1.2 mj mj dv/dt mosfet dv/dt ruggedness v ds = 0...480 v 50 v/ns d g s electrically isolated back surface 2500 v electrical isolation n-channel enhancement mode low r dson , high v dss mosfet ultra low gate charge i d = 11 a; t c = 25c features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500 v electrical isolation - low drain to tab capacitance (< 30 pf) ? fast coolmos ? 1) power mosfet 4 th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (uis) - low thermal resistance due to reduced chip thickness ? enhanced total power density applications ? switched mode power supplies (smps) ? uninterruptible power supplies (ups) ? power factor correction (pfc) ? welding ? inductive heating ? pdp and lcd adapter advantages ? easy assembly: no screws or isolation foils required ? space savings ? high power density ? high reliability 1) coolmos ? is a trademark of infneon technologies ag. isoplus220 tm g d s isolated back surface ? e72873 preliminary data
? 2010 ixys all rights reserved 2 - 4 20100303c ixkc 23n60c5 ixys reserves the right to change limits, test conditions and dimensions. source-drain diode symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. i s v gs = 0 v 16 a v sd i f = 16 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 16 a; -di f /dt = 100 a/s; v r = 400 v 450 12 70 ns c a component symbol conditions maximum ratings t vj t stg operating storage -55...+150 -55...+150 c c v isol rms leads-to-tab, 50/60 hz, f = 1 minute 2500 v~ f c mounting force 11-65 / 2.4-11 n/lb symbol conditions characteristic values min. typ. max. r thch with heatsink compound 0.28 k/w weight 3.1 g
? 2010 ixys all rights reserved 3 - 4 20100303c ixkc 23n60c5 ixys reserves the right to change limits, test conditions and dimensions. isoplus220 tm outline 2x b2 l1 l a2 2x b4 2x e 3x b 1 2 3 c d e a t * note 1 sym a2 b4 d1 b2 l1 e1 e 1. bottom heatsink is electrically isolated from pin 1, 2, or 3. product outline t o-273 except d and d1 dimension. 2. this drawing will meet dimensional requirement of jedec ss note: t l e b c d a 1 1.00 10.00 .433 .394 13.00 3.00 42.5 7.50 .1 18 .100 .512 .295 .138 .571 .335 basic 14.50 3.50 8.50 47.5 2.55 basic 2.50 4.00 2.35 12.00 15.00 .051 .035 .028 .472 .591 .093 .049 .039 .512 .630 .100 .065 inches min .098 .157 max .1 18 .197 1.30 0.90 2.55 1.65 1.00 0.70 13.00 16.00 1.25 millimeters max min 3.00 5.00 fig. 1 power dissipation fig. 2 typ. output characteristics fig. 3 typ. output characteristics 0 40 80 120 160 0 20 40 60 80 100 120 140 160 t c [c] p tot [ w] 0 4 . 5 v 5 v 5 . 5 v 6 v 7 v 8 v 1 0 v 2 0 v 0 10 20 30 40 50 0 5 1 0 1 5 20 v ds [v] i d ] a [ 4 . 5 v 5 v 5 . 5 v 6 v 7 v 8 v 1 0 v 2 0 v 0 15 30 45 60 75 90 105 120 0 5 1 0 1 5 20 v ds [v] i d ] a [ 2 x 2b2l1a4 2 2 e 3c 2b 2 e 3c 2b 2 x 2b2d1ea4 2 0 100 200 300 0 4 0 8 0 12 0 160 t c [c] p t o t ] w [
? 2010 ixys all rights reserved 4 - 4 20100303c ixkc 23n60c5 ixys reserves the right to change limits, test conditions and dimensions. 5 4 0 5 8 0 6 2 0 6 6 0 7 0 0 - 6 0 - 2 0 2 0 6 0 1 0 0 1 4 0 1 8 0 t j [ c ] v ) s s d ( r b ] v [ 0 2 5 0 5 0 0 7 5 0 1 0 0 0 2 0 6 0 1 0 0 1 4 0 1 8 0 t j [ c ] e s a ] j m [ c i s s c o s s c r s s 1 0 5 1 0 4 1 0 3 1 0 2 1 0 1 1 0 0 0 5 0 1 0 0 1 5 0 2 0 0 v ds [ v ] c ] f p [ 1 2 0 v 4 0 0 v 0 2 4 6 8 1 0 1 2 0 1 0 2 0 3 0 4 0 5 0 6 0 q g a t e [ n c ] v s g ] v [ 2 5 c 1 5 0 c 2 5 c , 9 8 % 1 5 0 c , 9 8 % 1 0 2 1 0 1 1 0 0 1 0 - 1 0 0 . 5 1 1 . 5 2 v s d [ v ] i f ] a [ 2 5 c 1 5 0 c 0 4 0 8 0 1 2 0 1 6 0 0 2 4 6 8 1 0 v g s [ v ] i d ] a [ t y p 9 8 % 0 0 . 0 5 0 . 1 0 . 1 5 0 . 2 0 . 2 5 0 . 3 - 6 0 - 2 0 2 0 6 0 1 0 0 1 4 0 1 8 0 t j [ c ] r ) n o ( s d [ ] 5 v 5 . 5 v 6 v 6 . 5 v 7 v 2 0 v 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 1 0 2 0 3 0 4 0 5 0 i d [ a ] r ) n o ( s d [ ] v d s = t j v = 150 c i d = 18 a v g s = 10 v v d s > 2 r d s ( o n ) m a x i d t j = t j = v d s = 120 v v g s = 0 v f = 1 m h z i d = 11 a i d = 0. 25 m a i d = 18 a pul s e d fig. 5 drain-source on-state resistance fig. 4 typ. drain-source on-state resistance characteristics fig. 7 forward characteristic of reverse diode fig. 8 typ. gate charge fig. 10 avalanche energy fig. 11 drain-source breakdown voltage fig. 6 typ. transfer characteristics fig. 9 typ. capacitances 1 1 0 10 0 10 0 0 10 00 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t p [ms] z t h jh [k/w] fig. 12 typ. transient thermal impedance with heat transfer paste
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